| PART |
Description |
Maker |
| HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V1 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料
|
HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| K4S641632 |
IC,SDRAM,4X1MX16,CMOS,TSOP,54PIN,PLASTIC
|
Samsung
|
| K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
SAMSUNG[Samsung semiconductor]
|
| HY57V28820HCT-H HY57V28820HCLT-K |
x8 SDRAM
From old datasheet system
SDRAM,4X4MX8,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| GBPC25 GBPC GBPC35 GBPC2502A GBPC2502W GBPC2504W G |
SINGLE PHASE BRIDGE
Aluminum Polymer Radial Lead Capacitor; Capacitance: 820uF; Voltage: 6.3V; Case Size: 10x13 mm; Packaging: Bulk
400V Bridge in a GBPC-W package
800V Bridge in a GBPC-W package
400V Bridge in a GBPC-A package
600V Bridge in a GBPC-A package
800V Bridge in a GBPC-A package
1000V Bridge in a GBPC-A package
1200V Bridge in a GBPC-A package
1200V Bridge in a GBPC-W package
600V Bridge in a GBPC-W package
1000V Bridge in a GBPC-W package
|
IRF[International Rectifier]
|
| 26MT140 26MT120 36MT80 26MT80 36MT120 26MT20 36MT1 |
THREE PHASE BRIDGE Power Modules
1200V 3 Phase Bridge in a D-63 package
50V 3 Phase Bridge in a D-63 package
1600V 3 Phase Bridge in a D-63 package
1400V 3 Phase Bridge in a D-63 package
1000V 3 Phase Bridge in a D-63 package
100V 3 Phase Bridge in a D-63 package
800V 3 Phase Bridge in a D-63 package
THREEPHASEBRIDGEPowerModules
THREE PHASE BRIDGE Power Modules 三相桥式电源模块
|
IRF[International Rectifier]
InternationalRectifier
International Rectifier, Corp.
|
| 25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package
1400V 40A Phase Control SCR in a TO-208AA (TO-48) package
1200V 25A Phase Control SCR in a TO-208AA (TO-48) package
1000V 25A Phase Control SCR in a TO-208AA (TO-48) package
100V 25A Phase Control SCR in a TO-208AA (TO-48) package
600V 25A Phase Control SCR in a TO-208AA (TO-48) package
400V 25A Phase Control SCR in a TO-208AA (TO-48) package
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| M25PE40VMP6TP |
2A Standard Fixed Output LDO Regulators; Package: TO220FP-3; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; 4兆位，低电压，页式可擦除的字节变性，50MHz的SPI总线，标准引脚串行闪
|
STMicroelectronics N.V.
|
| OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE
100V Dual N-Channel MOSFET in a S-6 package
400V Dual N-Channel MOSFET in a S-6 package
500V Dual N-Channel MOSFET in a S-6 package
200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers
ETC
International Rectifier
|
